Mbe eth wegscheiders

mbe eth wegscheiders

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PARAGRAPHOver the last years, semiconductors volume 14, - The highly subwavelength cavity mode volume of the nano-antennas combined with the large dipole moment of the.

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Roger Kaspar, MAS ETH MTEC Alumnus
Werner Wegscheider, ETH Zurich, Switzerland: �Highest-mobility arsenide and antimony-based heterostructures�. Preliminary scientific program. Detailed Schedule. We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures. W. Wegscheider. Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities.
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But the authorities have not introduced any preventive measures so far. Wires produced by this cleaved edge deposition CED technique have properties that are as least as good as the traditional CEO ones. Press Enter to activate screen reader mode. Main content Welcome to the homepage of the Wegscheider Group! Learn more about our research.